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Preliminary Data Sheet 2.2
FMS2017
2.4GHz DPDT GaAs Single-Band WLAN Switch
Features:
Available as RF known good die Suitable for Single-band WLAN 802.11b/g Applications Excellent low control voltage performance Very low Insertion loss typ. 0.55dB at 2.4GHz High isolation typ. 23dB at 2.4GHz
Functional Schematic
V4 TX V3
AN1
ANT2
V1
RX
V2
Description and Applications:
The FMS2017 is a low loss, single band Gallium Arsenide antenna diversity switch designed for use in Wireless LAN applications. The die is fabricated using the Filtronic FL05 0.5m switch process technology that offers leading edge performance, optimised for switch applications. The FMS2017 is designed for use in 802.11b/g WLAN modules.
Electrical Specifications:
Parameter
Insertion Loss (All Paths) Isolation (All Paths) Return Loss P1dB 2nd Harmonic Level 3rd Harmonic Level Switching speed
(TAMBIENT = 25C,Vctrl = 0V/(2.4V,+3.3V), ZIN = ZOUT = 50)
Conditions
2.5GHz, Small Signal 2.5GHz, Small Signal 2.5GHz, Small Signal 2.5GHz Control Voltage 3.0V 2.4GHz, Pin = 32dBm, Vctrl =2.4V 2.4GHz, Pin = 32dBm, Vctrl =2.4V Vctrl=2.4V, Pin=20dBm
Min
Typ
0.55 23 20 37 -65 -65 20
Max
Units
dB dB dB dBm dBc dBc nS
Note:
External DC blocking capacitors are required on all RF ports (typ: 47pF) All unused ports terminated in 50.
1
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com
Preliminary Data Sheet 2.2
FMS2017
Absolute Maximum Ratings:
Parameter
Max Input Power Control Voltage Operating Temperature Storage Temperature
Symbol
Pin Vctrl Toper Tstor
Absolute Maximum
+36dBm +5V -40C to +100C -55C to +150C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.
Truth Table:
State
1 2 3 4 5 6
V1
High Low Low Low Low High
V2
Low High Low Low High Low
V3
Low Low High Low Low High
V4
Low Low Low High High Low
PATH(S)
RX-ANT1 RX-ANT2 TX-ANT2 TX-ANT1 TX-ANT1 & RX-ANT2 TX-ANT2 & RX-ANT1
Note:
`High' `Low'
= +2.4V to +3.3V = 0V to +0.2V
Pad and Die Layout:
H D G
Pad Ref
A B
Pad Name
ANT1 RX ANT2 TX V1 V2 V3 V4
Description
Antenna 1 Receive Antenna 2 Transmit Vctrl1 (A1 to RX) Vctrl2 (A2 to RX) Vctrl3 (TX to A2) Vctrl4 (A1 to TX)
Pin Coordinates (m)
(155, 300) (465, 90) (775, 300) (465, 510) (155, 90) (775, 90) (775, 510) (155, 510)
A
C
C D E F
E
B
F
G H
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (m)
930x600
Die Thickness (m)
150
Min. Bond Pad Pitch (m)
225
Min. Bond pad opening (m)
85x85
2
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com
Preliminary Data Sheet 2.2
FMS2017
Typical Measured Performance on Evaluation Board (De-Embedded):
(Measurement Conditions VCTRL=3V, TAMBIENT = 25C unless otherwise stated)
Insertion Loss
0 .0
-15
Tx-Rx Isolation
-0 .2
-20
Insertion Loss (dB)
-0 .6
Isolation (dB)
-0 .4
-25
-30
-0 .8
-35
-1 .0 0.5 1.0 1 .5 2.0 F requ enc y (GH z) 2 .5 3.0
-40 0 .5 1.0 1 .5 2.0 Fr eque ncy (GH z) 2 .5 3.0
Return Loss
-10 -15
Return Loss (dB)
-20
-25
-30
-35 0 .5 1.0 1 .5 2.0 F r eque ncy (G H z) 2 .5 3.0
Insertion Loss vs Input Power
0 -0.2
Insertion Loss vs Control Voltage
0
-0.4
-0.4 Insertion Loss (dB) -0.6 -0.8 -1 -1.2
Insertion Loss (dB)
-0.8
-1.2
-1.6
-1.4 -1.6 10 15 20 25 Input Pow er (dBm ) 30 35
Input Power=28dBm
-2 1.50 1.75 2.00 2.25 Control Voltage (V) 2.50 2.75 3.00
3
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com
Preliminary Data Sheet 2.2
FMS2017
Evaluation Board:
V4, GND, V3 RF1/TX
BOM Label
C1 C2
Component
Capacitor, 100pF, 0603 Capacitor, 47pF, 0402 Preferred evaluation board material is 0.25 mm thick ROGERS RT4350. All RF tracks should be 50 ohm characteristic impedance. Absolute placement of critical.
C2 C2 C2 C2 C2
C1 C1
BOARD
C2 C2 C2
surface mount de-coupling capacitors is not
RF3/ANT1
C1 C1
RF4/ANT2
RF2/RX V1, GND V2
Evaluation Board De-Embedding Data (Measured):
Insertion Loss
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 0.5 1.0 1.5 2.0 Frequency (GHz) 2.5 3.0
Return Loss
0 -10
Insertion Loss (dB)
Return Loss (dB)
-20
-30
-40 0.5 1.0 1.5 2.0 Frequency (GHz) 2.5 3.0
4
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com
Preliminary Data Sheet 2.2
FMS2017
Ordering Information:
Part Number
FMS2017-000-WP FMS2017-000-GP FMS2017-000-EB FMS2017-000-FF
Description
Die - waffle pak Die - gel pak Die mounted on evaluation board Wafer mounted on film frame
Preferred Assembly Instructions:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4m diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150C and a bonding force of 40g has been shown to give effective results for 25m wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections.
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
5
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com

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